Adv Funct Mater 2007, 17:3187.CrossRef 40. Lee JH, Wang ZM, Kim ES, Kim NY, Park SH, Salamo GJ: Self-assembled InGaAs tandem nanostructures consisting a hole and pyramid on GaAs (311)A by droplet epitaxy. Phys Status Solidi (a) 2010, 207:348.CrossRef 41. Lee JH, Sablon K, Wang ZM, Salamo GJ: Evolution of InGaAs quantum dot molecules. J Appl Phys 2008,
103:054301.CrossRef 42. Wang ZM, Seydmohamadi S, Lee JH, Salamo GJ: Surface ordering of (In, Ga)As quantum dots controlled by GaAs substrate indexes. Appl Phys Lett 2004, 85:5031.CrossRef 43. Biegelsen DK, Bringans Tipifarnib chemical structure RD, Northrup JE, L E : Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy. Phys ReV B 1990, 41:5701–5711.CrossRef 44. Laukkanen P, Kuzmin M, Perälä RE, Ahola M, Mattila S, Väyrynen I: Electronic and structural properties of GaAs(100) (2 × 4) and InAs(100) (2 × 4) surfaces studied by core-level photoemission and scanning
tunneling microscopy. J Phys ReV B 2005, 72:045321.CrossRef 45. Jiang W, Wang ZM, Li AZ, Shibin L, Salamo GJ: Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces. Phys Status Solidi (RRL)-Rapid Res Lett 2010, 4:371–373.CrossRef 46. Duke CB, Mailhiot C, Paton A, Kahn A, Stiles K: Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates. J Vac Sci Technol A 1986, 4:947–952.CrossRef 47. Sakong S, Du YA, Kratzer P: Atomistic modeling of the Au droplet–GaAs interface for size-selective Fer-1 datasheet nanowire growth. Phys ReV B 2013, 88:155309.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions ML, MS, and JL participated in the experiment design and carried out the experiments. ML, MS, EK, Interleukin-3 receptor and JL participated in the analysis of data.
ML, MS, and JL designed the experiments and testing methods. ML and JL carried out the writing. All authors helped in drafting and read and approved the final manuscript.”
“Background Since the first work pioneered by O’Regan and Grätzel in 1991, dye-sensitized solar cells have been investigated extensively during the past two decades as promising alternatives to conventional silicon solar cells [1–5]. Although the light-to-electric conversion efficiency of 12% [6] reported recently was very impressive, the use of expensive and instability dyes to sensitize the solar cell is still not feasible for practical applications. Therefore, it is critical to tailor the materials to be not only cost-effective but also long lasting. Narrow bandgap semiconductor nanoparticles, with unique bandgap characters, have been put forward as an efficient and promising alternative to ruthenium complexes or organic dyes in solar cell applications.