Phys Rev B 2005,72(16):165321.CrossRef 13. Belyakov VA, Burdov VA, Lockwood R, Meldrum A: Silicon nanocrystals: fundamental theory and implications for stimulated emission. Ad Opt Technol 2008, 2008:1–32.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions JA, GNA, and DW carried out the magneto-luminescence measurements. JA, GNA, and PAS prepared the porous

Si samples, and JJD, DW, GNA, and JA all contributed to development and testing of the model. All authors contributed to planning this work and read and approved the final manuscript.”
“Background Binary wide-bandgap oxides are promising materials for optoelectronic, catalyst, and sensor applications [1, 2]. To satisfy Ganetespib cell line the different requirements of device applications, binary oxides doped with various dopants were studied to improve the intrinsic characteristics and increase the functionality of the oxides [3–5]. Binary oxides with a one-dimensional (1D) morphology show particular potential for nanodevice applications because of their high surface-to-volume ratios. Among various binary oxides, 1D ZnO is one of the most commonly used materials for nanodevices because

the quality of its synthetic processes is satisfactory [4, 6]. In addition to controlling the composition of binary oxides by doping, construction of an oxide heterostructure enhances their functionality [7]. Several proposed ZnO-based binary heterostructures exhibit satisfactory physical and chemical properties. The one-step or SHP099 ic50 two-step

processes involving chemical solutions and/or Momelotinib manufacturer thermal evaporation methodologies have been adopted for fabricating binary oxide heterostructures [8, 9]. However, research on an oxide heterostructure consisting of a ternary oxide is still lacking. This is because synthesis of an oxide heterostructure with a Phospholipase D1 1D ternary oxide counterpart is technologically challengeable [10–12]. A high-temperature solid-state reaction is a feasible methodology to form a ternary oxide by using constituent binary oxides [11, 12]. A small ionic radius difference between Ge and Zn ions increases the probability of the Ge ion replacing the Zn ion. Incorporating Ge into a ZnO crystal changes the optical properties of ZnO through modification of the electronic structure around the band edge [13]. Moreover, Zn2GeO4 (ZGO) is a ternary wide-bandgap semiconductor and a native defect phosphor exhibiting white luminescence under UV light excitation [14]. Lin et al. showed that hydrothermally synthesized ZGO rods annealed at 1,000°C exhibit satisfactory photocatalytic hydrogen generation [15]. Solvothermally synthesized ZGO nanostructures have been studied for the photocatalytic reduction of CO2 to CH4 [16]. In addition to photocatalytic applications, research on structure-dependent sensing characteristics of a single 1D ZGO or ZnO-ZGO heterostructure has been limited [17].